- CryoHEMTs: chip or packaged in ceramic SOT23
- CryoHEMTs based cryogenic preamplifiers
CryoHEMTs: chip or packaged in ceramic SOT23
Characteristics of available cryoHEMTs with various gate-surface measured at 4.2 K, Ids = 1 mA and Vds = 100 mV:
Denomination | 200pch | 100pch | 30pch | 5pch | 1pch | |
LgxW (µm²) | 1.5×105 | 6.4×104 | 2.0×104 | 2.0×103 | 4.0×102 | |
Cgs (pF); Cgd (pF) | 236; 8.9 | 103; 8.9 | 33; 3.5 | 4.6; 1.0 | 1.8; ~0.6 | |
Vds(mV); Ids(mA) | 100; 1.0 | 100; 1.0 | 100; 1.0 | 100; 1.0 | 100; 0.5 | |
gm (mS); gd (mS) | 52; 0.4 | 40; 1.2 | 115; 1.3 | 44; 1.3 | 15; 0.8 | |
ft = gm/(2πCgs) (Hz) | 3.5×107 | 6.2×107 | 5.5×108 | 1.5×109 | 1.3×109 | |
en (nV/Hz½) | @1Hz @10Hz @100Hz @1kHz |
5.4 1.7 0.52 0.24 |
6.3 2.1 0.76 0.34 |
14 4.5 1.5 0.57 |
30 12 4.5 1.4 |
100 30 10 2.7 |
en-white (nV/Hz½) | 0.18 | 0.22 | 0.12 | 0.24 | 0.4 | |
in (aA/Hz½) | @1Hz @1kHz |
21 6.8×102 |
15 5.1×102 |
9.1 2.4×102 |
2.2 70 |
3.6 57 |


LgxW is the gate surface; Cgs, the gate-source capacitance; Cgd, the gate-drain capacitance; Vds, the drain-source bias; Ids, the drain-source current; gm, the transconductance; gd, the output conductance; ft, the current-gain cutoff frequency; en, the equivalent input noise voltage; en-white, the equivalent input white noise voltage; in, the equivalent input noise current. Noise current is measured with the help of the capacitance input setup shown in the reference Appl. Phys. Lett. 105, 13504 (2014).
CryoHEMTs based cryogenic preamplifiers
Various cryogenic readout electronics have been realized with cryoHEMTs and performed (see papers in “applications”), few examples are as below. We can propose and provide several types of preamplifier to meet specific experimental requirement, e.g., set the output impedance of 50Ω by adding a common-drain amp for operating frequency » 1 MHz; decrease the white noise of the amps by adjusting their power consumption; minimize the Miller effect and the input capacitance by adding a follower (common-drain amp).
Wildly used preamplifier by a single 5pch cryoHEMT: specifications and some of resulted publications:

Amp model: A5-1 | 5pch cryoHEMT |
Operating temperature | ≤ 4.2 K |
Voltage gain | 5.5 |
Power consumption | 0.35 mW |
Input form | DC coupling |
Input impedance | 10 PΩ* // 11 pF** |
Output impedance | 125 Ω |
Noise voltages @ 4.2 K | 1.42 nV/Hz½ at 1 kHz 0.3 nV/Hz½ at 100 kHz 0.24 nV/Hz½ at 1 MHz |
Noise currents @ 4.2 K | 60 aA/Hz½ at 1 kHz 0.7 fA/Hz½ at 100 kHz 2 fA/Hz½ at 1 MHz |
*Input DC impedance > 10 PΩ (1016 Ω);
**input capacitance with the Miller effect.
- Quantum limit of heat flow across a single electronic channel
Science 342, 601 (2013) - Hong-Ou-Mandel experiment for temporal investigation of single electron fractionalization
Nature Communications 6, 6854 (2015) - Primary thermometry triad at 6 mK in mesoscopic circuits
Nature Communications 7, 12908 (2016) - Heat Coulomb blockade of one ballistic channel
Nature Physics 14(2), 145-148 (2018) - Charge trapping and super-Poissonian noise centres in a cuprate superconductor
Nature Physics, 14, 1183 (2018) - Noisy defects in the high-TC superconductor Bi2Sr2CaCu2O8+x
Nature Communications 10, 544 (2019) - Atomic scale shot-noise using cryogenic MHz circuitry
Review of Scientific Instruments 89, 093708 (2018) - Amplifier for scanning tunneling microscopy at MHz frequencies
Review of Scientific Instruments 89, 093709 (2018) - Improving the read-out of the resonance frequency of nanotube mechanical resonators
Applied Physics Letters 113, 063104 (2018) - Ultrasensitive displacement noise measurement of carbon nanotube mechanical resonators
Nano Letters 18, 5324 (2018)
Amp model: A200-1 | 200pch cryoHEMT |
Operating temperature | ≤ 4.2 K |
Voltage gain | 10 |
Power consumption | 0.35 mW |
Input form | DC coupling |
Input impedance | 10 PΩ* // 250 pF** |
Output impedance | 200 Ω |
Noise voltages @ 4.2 K | 6 nV/Hz½ at 1 Hz 1.7 nV/Hz½ at 10 Hz 0.52 nV/Hz½ at 100 Hz 0.24 nV/Hz½ at 1 kHz 0.18 nV/Hz½ at 100 kHz |
Noise currents @ 4.2 K | 21 aA/Hz½ at 1 Hz 0.7 fA/Hz½ at 1 kHz |
*Input DC impedance > 10 PΩ (1016 Ω);
**input
capacitance with the Miller effect.
Amp model: F&A200-025 | 200pch cryoHEMT |
Operating temperature | ≤ 4.2 K |
Voltage gain | 10 |
Power consumption | 0.51 mW |
Input form | DC coupling |
Input impedance | 10 PΩ* // 10 pF** |
Output impedance | 500 Ω |
Noise voltages @ 4.2 K | 8.4 nV/Hz½ at 1 Hz 2.4 nV/Hz½ at 10 Hz 0.73 nV/Hz½ at 100 Hz 0.37 nV/Hz½ at 1 kHz 0.3 nV/Hz½ at 100 kHz |
Noise currents @ 4.2 K | To be determined |
*Input DC impedance > 10 PΩ (1016 Ω);
**input
capacitance with a drastic Cgs reduction and the suppression of the Miller effect.